1 n-channel 100 v (d-s) mosfet features ? t rench fet ? power m o sfets ? 175 c junction temperature ? 100 % r g tested applications ? primary side switch note s: a. su rface mounted on 1" x 1" fr4 board. b. se e soa curve for voltage derating. product summ ary v ds (v) r ds(o n) ( ? )i d (a) 100 0.095 at v gs = 10 v 15 0.100 at v gs = 6 v 15 to-252 s gd top v i ew n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter sy mbol l imit uni t dr ain-source voltage v ds 100 v gate -source v oltage v gs 20 contin uous d rain current (t j = 175 c ) b t c = 25 c i d 15 a t c = 125 c 8.7 pulsed dr a i n current i dm 25 contin uous sou r ce current (diode conduction) i s 15 av alanche c urrent i ar 15 repetitive a v alanche energy (duty cycle ? 1 %) l = 0.1 mh e ar 11 . 3 m j maximum power dissipation t c = 25 c p d 62 b w t a = 25 c 2.7 a oper ating junction and storage temperature range t j , t stg - 55 to 17 5 c thermal resist ance rat ings pa rameter sy mbol typical maximum unit junction-to-ambient a t ? 10 s r thja 16 20 c/w steady state 45 55 j unction-to-case r thjc 22 . 4 www.din-tek.jp dt u 15 n 10
2 not e s: a. guaranteed by design, not s ubject to production testing. b. p ulse test; pulse width ? 300 s, duty cycle ? 2 %. c. indep endent of ope rating temperature. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications (t j = 25 c, unless otherwise noted) pa ram e ter symb ol test conditions min. typ. a max. unit static drain-source breakdown v oltage v ds v gs = 0 v , i d = 250 a 100 v gate th reshold v oltage v gs(t h) v ds = v gs , i d = 250 a 2 gate-bo dy lea kage i gss v ds = 0 v , v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v, v gs = 0 v, t j = 175 c 25 0 on-state drain current b i d(on) v ds = ? 5 v, v gs = 10 v 15 a drain-source on-state re sista nce b r ds(o n ) v gs = 10 v, i d = 15 a 0.077 0.095 ? v gs = 10 v, i d = 15 a, t j = 125 c 0.190 v gs = 10 v, i d = 15 a, t j = 175 c 0.250 v gs = 6 v, i d = 10 a 0.081 0.100 f orw ard transconductance b g fs v ds = 15 v, i d = 15 a 25 s dynam i c a input capacita n ce c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 900 pf output c apacitance c oss 115 rev erse t ransfer capacitance c rss 70 to tal gate charge c q g v ds = 7 5 v, v gs = 10 v , i d = 15 a 20 25 nc gate-source charge c q gs 5.5 gate-dr a in charge c q gd 7 ga te re sistance r g 13 . 2 ? tu r n - o n d e l ay t i m e c t d(on) v dd = 75 v, r l = 5 ? i d ? 15 a, v gen = 10 v , r g = 2.5 ? 812 ns rise time c t r 35 5 5 t urn-off delay time c t d(off) 17 2 5 fa ll time c t f 30 4 5 sour ce-drain d iode ratings and characteristic (t c = 25 c) pulse d current i sm 15 a diode f orw a rd voltage b v sd i f = 15 a, v gs = 0 v 0.9 1.5 v source-drain reverse recovery time t rr i f = 15 a, di/dt = 100 a/s 55 85 ns www.din-tek.jp dt u 15 n 10
3 typica l c har acteristics (25 c unless noted) output char ac teristics transconductance capacitance 0 5 10 15 20 25 0 2468 1 0 v ds - drain-to-source v oltage (v) - drain current (a) i d 3 v v gs = 10 thru 6 v 4 v 5 v 0 8 16 24 32 40 0 5 10 15 20 25 - t r ansconductance (s) g fs t c = - 5 5 c 25 c 125 c i d - dr ain current (a) 0 300 600 900 1200 1500 0 2 04 06080100 v ds - drain-to-source v oltage (v) c - capacitance (pf) c oss c is s c rss transfer ch aracteristics on -resistance vs. drain current gate charge 0 5 10 15 20 25 0123 456 v gs - gate-to-source voltage (v) - dr ain current (a) i d - 55 c t c = 125 c 25 c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 5 10 15 20 25 - on-resistance ( ? ) i d - drain current (a) r ds(on) v gs = 10 v v gs = 6 v - gate-to-source v oltage (v) q g - t otal gate charge (nc) v gs 0 4 8 12 16 20 0 8 16 24 32 40 v ds = 75 v i d = 15 a www.din-tek.jp dt u 15 n 10
4 ty pi cal ch aracteristics (25 c unless noted) thermal ratings on -res istan ce vs. junction temperature (normaliz ed) - on-resistance r ds(on) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 t j - j unction temperature ( c) v gs = 10 v i d = 15 a so urce-d r ain diode forward voltage v sd - source-to-dr ain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 maximum av alanch e drain current vs. case temperature 0 5 10 15 20 0 25 50 75 100 125 150 175 t c - case temperature (c) - dr ain current (a) i d safe operatin g area - dr ain current (a) i d 10 0.1 0.1 1 10 1000 limited by r ds( on) 1 100 t c = 25 c single pulse 10 ms 100 ms 1 s, dc 100 s 10 s 100 1 ms v ds - dr a in-to-source voltage (v) * v gs > mi ni mum v gs at which r ds(on ) is specified * normalized t h ermal transient impedance, junction-to-case square w ave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective t ransient thermal impedance 0.2 0.1 duty cycle = 0.5 10 0.05 0.02 single pulse www.din-tek.jp dt u 15 n 10
1 to-252aa case outline note ? dim en sion l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note rec ommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) application note www.din-tek.jp
1 disclaimer all pro d uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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